An electrochemical route to MoS2 nanosheets for device applications

Abstract

This paper presents a facile electrochemical exfoliation method to mass produce device quality MoS2 semiconducting nanosheets. During the exfoliation process, anionic SO42- and OH- ions intercalate into a bulk Mos(2) and they form gaseous SO2 or O-2 gas bubbles which produce a separating force for MoS2 nanosheets exfoliation. Monolayer or few layers of MoS2 nanosheets were obtained on a SiO2/Si substrate. N-type field effect transistors (n-FETs) were fabricated using the exfoliated MoS2 nanosheets and these n-FETs showed excellent device characteristics. The measured on/off current ratio was around 10(3), the field-effect mobility on SiO2 gate dielectrics was 2 cm(2)/(V s). (C) 2014 Elsevier B.V. All rights reserved.