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An electrochemical route to MoS2 nanosheets for device applications
- Authors
- You, Xueqiu; Liu, Na; Lee, Cheol Jin; Pak, James Jungho
- Issue Date
- 15-4월-2014
- Publisher
- ELSEVIER
- Keywords
- Electrochemical exfoliation; Field-effect transistor; Molybdenum disulfide; 2-D material
- Citation
- MATERIALS LETTERS, v.121, pp.31 - 35
- Indexed
- SCIE
SCOPUS
- Journal Title
- MATERIALS LETTERS
- Volume
- 121
- Start Page
- 31
- End Page
- 35
- ISSN
- 0167-577X
- Abstract
- This paper presents a facile electrochemical exfoliation method to mass produce device quality MoS2 semiconducting nanosheets. During the exfoliation process, anionic SO42- and OH- ions intercalate into a bulk Mos(2) and they form gaseous SO2 or O-2 gas bubbles which produce a separating force for MoS2 nanosheets exfoliation. Monolayer or few layers of MoS2 nanosheets were obtained on a SiO2/Si substrate. N-type field effect transistors (n-FETs) were fabricated using the exfoliated MoS2 nanosheets and these n-FETs showed excellent device characteristics. The measured on/off current ratio was around 10(3), the field-effect mobility on SiO2 gate dielectrics was 2 cm(2)/(V s). (C) 2014 Elsevier B.V. All rights reserved.
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