Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Joo, Min-Kyu | - |
dc.contributor.author | Mouis, Mireille | - |
dc.contributor.author | Jeon, Dae-Young | - |
dc.contributor.author | Barraud, Sylvain | - |
dc.contributor.author | Park, So Jeong | - |
dc.contributor.author | Kim, Gyu-Tae | - |
dc.contributor.author | Ghibaudo, Gerard | - |
dc.date.accessioned | 2021-09-05T10:17:11Z | - |
dc.date.available | 2021-09-05T10:17:11Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-04 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/98937 | - |
dc.description.abstract | This paper presents the low-temperature characteristics of flat-band (V-FB) and low-field mobility in accumulation regime (mu(0_acc)) of n-type junctionless transistors (JLTs). To this end, split capacitance-to-voltage (C-V), dual gate coupling and low-temperature measurements were carried out to systematically investigate V-FB. Additionally, the gate oxide capacitance per unit area C-ox and the doping concentration N-D were evaluated as well. Accounting for the position of V-FB and the charge based analytical model of JLTs, bulk mobility (mu(B)) and mu(0_acc) were separately extracted in volume and surface conduction regime, respectively. Finally, the role of neutral scattering defects was found the most limiting factor concerning the degradation of mu(B) and mu(0_acc) with gate length in planar and tri-gate nanowire JLTs. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | MOS STRUCTURES | - |
dc.subject | GATE | - |
dc.subject | EXTRACTION | - |
dc.subject | BEHAVIOR | - |
dc.subject | MOSFETS | - |
dc.subject | LENGTH | - |
dc.subject | MODE | - |
dc.title | Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, So Jeong | - |
dc.contributor.affiliatedAuthor | Kim, Gyu-Tae | - |
dc.identifier.doi | 10.1088/0268-1242/29/4/045024 | - |
dc.identifier.scopusid | 2-s2.0-84896981521 | - |
dc.identifier.wosid | 000333275600026 | - |
dc.identifier.bibliographicCitation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.29, no.4 | - |
dc.relation.isPartOf | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.title | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 29 | - |
dc.citation.number | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | MOS STRUCTURES | - |
dc.subject.keywordPlus | GATE | - |
dc.subject.keywordPlus | EXTRACTION | - |
dc.subject.keywordPlus | BEHAVIOR | - |
dc.subject.keywordPlus | MOSFETS | - |
dc.subject.keywordPlus | LENGTH | - |
dc.subject.keywordPlus | MODE | - |
dc.subject.keywordAuthor | junctionless transistors | - |
dc.subject.keywordAuthor | flat-band voltage | - |
dc.subject.keywordAuthor | low-field mobility | - |
dc.subject.keywordAuthor | neutral defects scattering | - |
dc.subject.keywordAuthor | threshold voltage | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.