Field-induced macroscopic barrier model for persistent photoconductivity in nanocrystalline oxide thin-film transistors
- Authors
- Choi, Hyun-Sik; Jeon, Sanghun
- Issue Date
- 31-3월-2014
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.104, no.13
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 104
- Number
- 13
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/98974
- DOI
- 10.1063/1.4870406
- ISSN
- 0003-6951
- Abstract
- Persistent photoconductivity (PPC) in nanocrystalline InZnO thin-film transistors (TFTs) was studied using carrier fluctuation measurements and transient analysis. Low-frequency noise measurements and decay kinetics indicate that the band bending by the external field together with the ionized oxygen vacancy (V-o(++)) generated during the light exposure is the main cause of the PPC phenomenon. Based on these observations, a field-induced macroscopic barrier model is proposed as the origin of PPC for InZnO TFTs. In particular, this model explains that the carrier separation between e and V-o(++) is induced by the external field applied to the three electrodes inside the transistor. (C) 2014 AIP Publishing LLC.
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Collections - College of Science and Technology > Display Convergence in Division of Display and Semiconductor Physics > 1. Journal Articles
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