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Deep- ultraviolet AlGaN light- emitting diodes with variable quantum well and barrier widths
- Authors
- Kim, Su Jin; Kim, Tae Geun
- Issue Date
- 3월-2014
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- device simulations; light-emitting diodes; potential barriers; quantum efficiency; quantum wells
- Citation
- PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.211, no.3, pp.656 - 660
- Indexed
- SCIE
SCOPUS
- Volume
- 211
- Number
- 3
- Start Page
- 656
- End Page
- 660
- ISSN
- 1862-6300
- Abstract
- In this study, a device scheme for improving the internal quantum efficiency (IQE) of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) is proposed and numerically investigated using SimuLED software. By step-increasing the thickness of the quantum wells and step-decreasing the thickness of quantum barriers in a multiple quantum well (MQW) structure, the IQE of a DUV-LED at 20mA is increased by a factor of approximately 1.3 relative to the reference LED. These improvements are attributed to increased radiative recombination rates resulting from enhanced hole injection and uniform carrier distribution within the MQWs.
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