On the LPCVD-Formed SiO2 Etching Mechanism in CF4/Ar/O-2 Inductively Coupled Plasmas: Effects of Gas Mixing Ratios and Gas Pressure
DC Field | Value | Language |
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dc.contributor.author | Son, Jinyoung | - |
dc.contributor.author | Efremov, Alexander | - |
dc.contributor.author | Chun, Inwoo | - |
dc.contributor.author | Yeom, Geun Young | - |
dc.contributor.author | Kwon, Kwang-Ho | - |
dc.date.accessioned | 2021-09-05T10:51:52Z | - |
dc.date.available | 2021-09-05T10:51:52Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-03 | - |
dc.identifier.issn | 0272-4324 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/99110 | - |
dc.description.abstract | An investigation of etching mechanism of low-temperature SiO2 thin films in CF4/Ar/O-2 inductively coupled plasmas at constant input power (900 W) and bias power (200 W) was carried out. It was found that that the variations of Ar/O-2 mixing ratio (0-50 %) at constant 50 % CF4 fraction as well as the change in gas pressure (4-10 mTorr) resulted in non-monotonic SiO2 etching rates. The zero-dimensional plasma model with Langmuir probe diagnostics data provided the detailed information on formation-decay kinetics for plasma active species. The model-based analysis of etching kinetics showed that these effects were not connected with the non-monotonic change of fluorine atom density (as was found in several works for the binary CF4/O-2 system), but resulted from the decrease in reaction probability and with the transition from neutral-flux to ion-flux-limited regimes of ion assisted chemical reaction. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | SPRINGER | - |
dc.subject | MODEL-BASED ANALYSIS | - |
dc.subject | PROBE MEASUREMENTS | - |
dc.subject | SURFACE KINETICS | - |
dc.subject | GLOBAL-MODEL | - |
dc.subject | DISCHARGES | - |
dc.subject | SILICON | - |
dc.subject | CF4 | - |
dc.subject | PARAMETERS | - |
dc.subject | AR/CF4 | - |
dc.title | On the LPCVD-Formed SiO2 Etching Mechanism in CF4/Ar/O-2 Inductively Coupled Plasmas: Effects of Gas Mixing Ratios and Gas Pressure | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kwon, Kwang-Ho | - |
dc.identifier.doi | 10.1007/s11090-013-9513-1 | - |
dc.identifier.scopusid | 2-s2.0-84898546995 | - |
dc.identifier.wosid | 000331001000001 | - |
dc.identifier.bibliographicCitation | PLASMA CHEMISTRY AND PLASMA PROCESSING, v.34, no.2, pp.239 - 257 | - |
dc.relation.isPartOf | PLASMA CHEMISTRY AND PLASMA PROCESSING | - |
dc.citation.title | PLASMA CHEMISTRY AND PLASMA PROCESSING | - |
dc.citation.volume | 34 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 239 | - |
dc.citation.endPage | 257 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Chemical | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Fluids & Plasmas | - |
dc.subject.keywordPlus | MODEL-BASED ANALYSIS | - |
dc.subject.keywordPlus | PROBE MEASUREMENTS | - |
dc.subject.keywordPlus | SURFACE KINETICS | - |
dc.subject.keywordPlus | GLOBAL-MODEL | - |
dc.subject.keywordPlus | DISCHARGES | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | CF4 | - |
dc.subject.keywordPlus | PARAMETERS | - |
dc.subject.keywordPlus | AR/CF4 | - |
dc.subject.keywordAuthor | Low-temperature SiO2 | - |
dc.subject.keywordAuthor | CF4 plasma | - |
dc.subject.keywordAuthor | Diagnostics | - |
dc.subject.keywordAuthor | Modeling | - |
dc.subject.keywordAuthor | Etching mechanism | - |
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