A Universal Method of Producing Transparent Electrodes Using Wide- Bandgap Materials
- Authors
- Kim, Hee-Dong; An, Ho-Myoung; Kim, Kyoung Heon; Kim, Su Jin; Kim, Chi Sun; Cho, Jaehee; Schubert, E. Fred; Kim, Tae Geun
- Issue Date
- 3월-2014
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- LEDs; conducting filaments; transparent conductive electrodes
- Citation
- ADVANCED FUNCTIONAL MATERIALS, v.24, no.11, pp.1575 - 1581
- Indexed
- SCIE
SCOPUS
- Journal Title
- ADVANCED FUNCTIONAL MATERIALS
- Volume
- 24
- Number
- 11
- Start Page
- 1575
- End Page
- 1581
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/99158
- DOI
- 10.1002/adfm.201301697
- ISSN
- 1616-301X
- Abstract
- A UV light-emitting diode (LED) is an eco-friendly optical source with diverse applications. However, currently, the external quantum efficiency (EQE) of AlGaN-based UV LEDs, particularly in the UV-C band (<280 nm), is very low (<11%) mainly due to a large optical absorption via p-GaN contact layers. A direct Ohmic contact to p-AlGaN layers should be obtained using UV-transparent conductive electrodes (TCEs) to solve this problem. A universal method is presented here to make such contact using electrical breakdown, with wide-bandgap materials, to form conductive filaments (CFs), providing a current path between the TCEs and the p-(Al)GaN layers. The contact resistance between the TCEs and the p-GaN layers (or p-AlGaN) is found to be on the order of 10(-5) cm(2) (or 10(-3) cm(2)), while optical transmittance is maintained up to 95% for AlN-based TCEs at 250 nm. These findings could be a critical turning point delivering a breakthrough in UV LED technologies.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.