Improved resistive switching phenomena observed in SiNx-based resistive switching memory through oxygen doping process
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Ju Hyun | - |
dc.contributor.author | Kim, Hee-Dong | - |
dc.contributor.author | Hong, Seok Man | - |
dc.contributor.author | Yun, Min Ju | - |
dc.contributor.author | Jeon, Dong Su | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.date.accessioned | 2021-09-05T11:11:41Z | - |
dc.date.available | 2021-09-05T11:11:41Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-03 | - |
dc.identifier.issn | 1862-6254 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/99213 | - |
dc.description.abstract | The improvement of resistive switching (RS) phenomena of silicon-nitride (SiNx)-based resistive random access memory (ReRAM) cells through oxygen doping process was investigated. As a result, compared to un-doped SiNx films, the oxygen doped SiNx (SiNx:O-2)-based ReRAM cells show a lower current (approximate to 0.3 A) level at a high resistance state and a smaller variation of operating voltage through the reduction of leakage current in the SiNx:O-2 film by combining silicon dangling bonds and doped oxygen ions. Therefore, we believe that the oxygen doping process in SiNx films can effectively improve the RS characteristics of SiNx-based ReRAM cells. ((c) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.subject | NITRIDE | - |
dc.title | Improved resistive switching phenomena observed in SiNx-based resistive switching memory through oxygen doping process | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.doi | 10.1002/pssr.201308309 | - |
dc.identifier.scopusid | 2-s2.0-84896052988 | - |
dc.identifier.wosid | 000332928600006 | - |
dc.identifier.bibliographicCitation | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.8, no.3, pp.239 - 242 | - |
dc.relation.isPartOf | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | - |
dc.citation.title | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | - |
dc.citation.volume | 8 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 239 | - |
dc.citation.endPage | 242 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | NITRIDE | - |
dc.subject.keywordAuthor | resistive switching | - |
dc.subject.keywordAuthor | ReRAM | - |
dc.subject.keywordAuthor | silicon nitride | - |
dc.subject.keywordAuthor | charge trapping | - |
dc.subject.keywordAuthor | silicon | - |
dc.subject.keywordAuthor | dangling bonds | - |
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