Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors
DC Field | Value | Language |
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dc.contributor.author | Xi, Yuyin | - |
dc.contributor.author | Hsieh, Yueh-Ling | - |
dc.contributor.author | Hwang, Ya-Hsi | - |
dc.contributor.author | Li, Shun | - |
dc.contributor.author | Ren, Fan | - |
dc.contributor.author | Pearton, Stephen J. | - |
dc.contributor.author | Patrick, Erin | - |
dc.contributor.author | Law, Mark E. | - |
dc.contributor.author | Yang, Gwangseok | - |
dc.contributor.author | Kim, Hong-Yeol | - |
dc.contributor.author | Kim, Jihyun | - |
dc.contributor.author | Baca, Albert G. | - |
dc.contributor.author | Allerman, Andrew A. | - |
dc.contributor.author | Sanchez, Carlos A. | - |
dc.date.accessioned | 2021-09-05T12:54:56Z | - |
dc.date.available | 2021-09-05T12:54:56Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-01 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/99726 | - |
dc.description.abstract | The authors report an investigation of the effect of different doses of 5 MeV proton irradiation on circular-shaped AlGaN/GaN high electron mobility transistors. The degradation of saturation drain current (I-DSS) was minimal up to an irradiation dose of 2 x 10 13 cm(-2). By comparison, a dose of 2 x 10 14 cm(-2) dose produced a 12.5% reduction of IDSS and 9.2% increase of sheet resistance. In addition, the threshold voltage showed larger positive shifts for 2 x 10 14 cm(-2) dose compared to 2 x 10 13 cm(-2), and both of these doses produced showed larger shifts for smaller gate to drain distances. Increases of 39.8% and 47.1%, respectively, in the breakdown voltage for 6 and 10 mu m drain to gate distances (L-GD) was observed and was attributed to the creation of a virtual gate at the AlGaN/GaN interface due to the irradiation, which reduced the peak electric field at the drain side of the gate edge. (C) 2014 American Vacuum Society. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.subject | IRRADIATION | - |
dc.title | Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1116/1.4836577 | - |
dc.identifier.scopusid | 2-s2.0-84929428173 | - |
dc.identifier.wosid | 000330774300026 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.32, no.1 | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 32 | - |
dc.citation.number | 1 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | IRRADIATION | - |
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