Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors
- Authors
- Xi, Yuyin; Hsieh, Yueh-Ling; Hwang, Ya-Hsi; Li, Shun; Ren, Fan; Pearton, Stephen J.; Patrick, Erin; Law, Mark E.; Yang, Gwangseok; Kim, Hong-Yeol; Kim, Jihyun; Baca, Albert G.; Allerman, Andrew A.; Sanchez, Carlos A.
- Issue Date
- 1월-2014
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.32, no.1
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- Volume
- 32
- Number
- 1
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/99726
- DOI
- 10.1116/1.4836577
- ISSN
- 1071-1023
- Abstract
- The authors report an investigation of the effect of different doses of 5 MeV proton irradiation on circular-shaped AlGaN/GaN high electron mobility transistors. The degradation of saturation drain current (I-DSS) was minimal up to an irradiation dose of 2 x 10 13 cm(-2). By comparison, a dose of 2 x 10 14 cm(-2) dose produced a 12.5% reduction of IDSS and 9.2% increase of sheet resistance. In addition, the threshold voltage showed larger positive shifts for 2 x 10 14 cm(-2) dose compared to 2 x 10 13 cm(-2), and both of these doses produced showed larger shifts for smaller gate to drain distances. Increases of 39.8% and 47.1%, respectively, in the breakdown voltage for 6 and 10 mu m drain to gate distances (L-GD) was observed and was attributed to the creation of a virtual gate at the AlGaN/GaN interface due to the irradiation, which reduced the peak electric field at the drain side of the gate edge. (C) 2014 American Vacuum Society.
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