Electrical Detection of the Spin Hall Effects in InAs Quantum Well Structure with Perpendicular Magnetization of [Pd/CoFe] Multilayer
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Tae Young | - |
dc.contributor.author | Koo, Hyun Cheol | - |
dc.contributor.author | Kim, Hyung-Jun | - |
dc.contributor.author | Han, Suk Hee | - |
dc.contributor.author | Chang, Joonyeon | - |
dc.date.accessioned | 2021-09-05T12:56:29Z | - |
dc.date.available | 2021-09-05T12:56:29Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2014-01 | - |
dc.identifier.issn | 0018-9464 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/99736 | - |
dc.description.abstract | The spin Hall effect was electrically detected in an InAs quantum well structure. The spin Hall device consists of an InAs Hall bar and a Pd/CoFe multilayer electrode which has magnetization perpendicular to the sample plane. Spin polarized electrons injected from the Pd/CoFe electrode have spin orientation perpendicular to the quantum well and cause a charge accumulation at the edge of the InAs channel. In the absence of an external magnetic field, a large spin Hall resistance, 9.3 m Omega, is observed and the spin Hall angle is found to be similar to 0.01. The dominant mechanism is believed to side-jump scattering. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Electrical Detection of the Spin Hall Effects in InAs Quantum Well Structure with Perpendicular Magnetization of [Pd/CoFe] Multilayer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Koo, Hyun Cheol | - |
dc.identifier.doi | 10.1109/TMAG.2013.2278175 | - |
dc.identifier.scopusid | 2-s2.0-84904356989 | - |
dc.identifier.wosid | 000330026800025 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON MAGNETICS, v.50, no.1 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON MAGNETICS | - |
dc.citation.title | IEEE TRANSACTIONS ON MAGNETICS | - |
dc.citation.volume | 50 | - |
dc.citation.number | 1 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | Spin Hall effect (SHE) | - |
dc.subject.keywordAuthor | spin polarized transport | - |
dc.subject.keywordAuthor | spintronics | - |
dc.subject.keywordAuthor | quantum well (QW) | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.