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Electrical Detection of the Spin Hall Effects in InAs Quantum Well Structure with Perpendicular Magnetization of [Pd/CoFe] Multilayer

Authors
Lee, Tae YoungKoo, Hyun CheolKim, Hyung-JunHan, Suk HeeChang, Joonyeon
Issue Date
1월-2014
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Spin Hall effect (SHE); spin polarized transport; spintronics; quantum well (QW)
Citation
IEEE TRANSACTIONS ON MAGNETICS, v.50, no.1
Indexed
SCIE
SCOPUS
Journal Title
IEEE TRANSACTIONS ON MAGNETICS
Volume
50
Number
1
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/99736
DOI
10.1109/TMAG.2013.2278175
ISSN
0018-9464
Abstract
The spin Hall effect was electrically detected in an InAs quantum well structure. The spin Hall device consists of an InAs Hall bar and a Pd/CoFe multilayer electrode which has magnetization perpendicular to the sample plane. Spin polarized electrons injected from the Pd/CoFe electrode have spin orientation perpendicular to the quantum well and cause a charge accumulation at the edge of the InAs channel. In the absence of an external magnetic field, a large spin Hall resistance, 9.3 m Omega, is observed and the spin Hall angle is found to be similar to 0.01. The dominant mechanism is believed to side-jump scattering.
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