Effect of Bottom Electrode Annealing Temperature and Atmosphere on Endurance Characteristics of Ferroelectric Hf0.5Zr0.5O2 Capacitors

Park, Hyeonjung; Han, Changwoo; Choi, Yejoo; Choi, Myeongjae; Won, Sangmin; Shin, Changhwan

doi:10.1109/LED.2025.3603933

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Effect of Bottom Electrode Annealing Temperature and Atmosphere on Endurance Characteristics of Ferroelectric Hf0.5Zr0.5O2 Capacitors

Park, Hyeonjung;
Han, Changwoo;
Choi, Yejoo;
Choi, Myeongjae;
Won, Sangmin;
... Shin, Changhwan

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초록

In this study, endurance characteristics of W/HZO/W ferroelectric capacitors were improved by optimizing the annealing conditions of the tungsten (W) bottom electrode. The effects of annealing temperature and ambient on device performance were investigated. The W/HZO/W capacitor annealed at 600 degrees C under vacuum exhibited an endurance improvement of more than two orders of magnitude compared to the non-annealed capacitor. Depending on the annealing condition, tungsten diffusion into the HZO film was effectively suppressed, and a thin interfacial W18O49 layer was formed between the bottom electrode and HZO layer. This work provides a perspective to optimize the bottom electrode annealing conditions to enhance the endurance characteristics of W/HZO/W capacitors

키워드

Capacitors; Electrodes; Annealing; Tungsten; Atmosphere; Nitrogen; X-ray scattering; Temperature; Leakage currents; Atmospheric measurements; Ferroelectrics; HZO; MFM; endurance; HZO capacitor; tungsten electrode

제목: Effect of Bottom Electrode Annealing Temperature and Atmosphere on Endurance Characteristics of Ferroelectric Hf0.5Zr0.5O2 Capacitors

저자: Park, Hyeonjung; Han, Changwoo; Choi, Yejoo; Choi, Myeongjae; Won, Sangmin; Shin, Changhwan

DOI: 10.1109/LED.2025.3603933

발행일: 2025-11

유형: Article

저널명: IEEE Electron Device Letters

권: 46

호: 11

페이지: 2038 ~ 2041