신창환 프로필 사진

신창환

Shin, Changhwan

공과대학

자료 필터

자료유형

발행연도

2022 ~ 2026
2022 2026

키워드

언어

선택된 필터

  • article
  • conference
  • book

전체 54건 중 1번부터 10번까지의 결과를 표시합니다.

2026
Article

Polarization-State-DependentCharge Screening in Metal-Ferroelectric-MetalMemcapacitors Enabled by an IGZO Oxygen Reservoir Layer

  • Kim, Donghyeon ; 
  • Shin, Huiseong ; 
  • Kim, Junseok ; 
  • Park, Hyeonjung ; 
  • Han, Changwoo ; 
  • ... Shin, Changhwan ; 
  • 외 1명
  • 2026-07-22
  • ACS Applied Materials & Interfaces
  • AMER CHEMICAL SOC
Article

Impact of Metal-Gate-Induced Stress on Device- and Circuit-Level Performance of GAAFET CMOS Inverters

  • Lim, Subin ; 
  • Lim, Jaehyuk ; 
  • Han, Donghwan ; 
  • Kim, Myongjin ; 
  • Shin, Changhwan
  • 2026-07-09
  • Electronics (Basel)
  • MDPI
Article

Source/drain epitaxial thickness scaling effects on DC performance and RC delay in stacked nanosheet gate-all-around FETs

  • 2026-06-01
  • Semiconductor Science and Technology
  • IOP Publishing Ltd
Article

All-Oxide ITO/HZO/WO x Ferroelectric Tunnel Junctions with Oxygen-Engineered Interfaces for Highly Endurable Neuromorphic Computing

  • Jeong, Seungjoon ; 
  • Shin, Huiseong ; 
  • Choi, Myeongjae ; 
  • Han, Changwoo ; 
  • Park, Hyeonjung ; 
  • ... Shin, Changhwan ; 
  • 외 2명
  • 2026-04-15
  • ACS Applied Materials & Interfaces
  • AMER CHEMICAL SOC
Article

Low-Voltage and High-k Properties of Bilayer HZO Capacitors at the Morphotropic Phase Boundary for Next-Generation Memory Applications

  • Kim, Junseok ; 
  • Park, Hyeonjung ; 
  • Han, Changwoo ; 
  • Shin, Huiseong ; 
  • Choi, Myeongjae ; 
  • ... Shin, Changhwan
  • 2026-04-01
  • Advanced Science
  • WILEY-V C H VERLAG GMBH
Article

Reduced Leakage and Enhanced Endurance via an ITO Oxygen Reservoir Layer in HZO Ferroelectric Capacitors

  • Choi, Haevin ; 
  • Park, Hyeonjung ; 
  • Han, Changwoo ; 
  • Choi, Myeongjae ; 
  • Choi, Yejoo ; 
  • ... Shin, Changhwan
  • 2026-04
  • IEEE Electron Device Letters
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article

Ferroelectric Charging Tunnel Junctions: Resolving Transport Trade-Offs via Trap-Assisted Barrier Modulation for Physical Reservoir Computing

  • Shin, Huiseong ; 
  • Choi, Myeongjae ; 
  • Kim, Junseok ; 
  • Jeong, Seungjoon ; 
  • Kim, Donghyeon ; 
  • ... Shin, Changhwan ; 
  • 외 4명
  • 2026-03-31
  • Advanced Functional Materials
  • WILEY-V C H VERLAG GMBH
Article

Asymmetric Polarization in FE/AFE Bilayer HZO Memcapacitors via Composition-Induced Built-in Bias

  • Kim, Junseok ; 
  • Shin, Huiseong ; 
  • Park, Hyeonjung ; 
  • Han, Changwoo ; 
  • Choi, Myeongjae ; 
  • ... Shin, Changhwan
  • 2026-03-25
  • ACS Applied Materials & Interfaces
  • AMER CHEMICAL SOC
Article

Fast and energy-efficient resistive switching in ZrOx/TaOx bilayer structures under ultra-low voltage operation for next-generation memory applications

  • Lee, Min Kyung ; 
  • Jeong, Jae-Seung ; 
  • Jung, Jaeho ; 
  • Seo, Hyun Kyu ; 
  • Shin, Changhwan ; 
  • 외 2명
  • 2026-03-03
  • Advanced Composites and Hybrid Materials
  • SPRINGERNATURE
Article

Layered Trench Gate Exhibiting Source/Drain Over-Etch Immunity Without Punch-Through Stopper

  • Jeong, Seungjoon ; 
  • Kim, Myongjin ; 
  • Lim, Subin ; 
  • Shin, Huiseong ; 
  • Shin, Changhwan
  • 2026-03
  • IEEE Transactions on Device and Materials Reliability
  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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