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자료 필터
자료유형
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2022 ~ 2026
2022 2026
키워드
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선택된 필터
- article
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전체 54건 중 1번부터 10번까지의 결과를 표시합니다.
2026
Article
Polarization-State-DependentCharge Screening in Metal-Ferroelectric-MetalMemcapacitors Enabled by an IGZO Oxygen Reservoir Layer
- Kim, Donghyeon ;
- Shin, Huiseong ;
- Kim, Junseok ;
- Park, Hyeonjung ;
- Han, Changwoo ;
- ... Shin, Changhwan ;
- 외 1명
- 2026-07-22
- ACS Applied Materials & Interfaces
- AMER CHEMICAL SOC
Article
Impact of Metal-Gate-Induced Stress on Device- and Circuit-Level Performance of GAAFET CMOS Inverters
- Lim, Subin ;
- Lim, Jaehyuk ;
- Han, Donghwan ;
- Kim, Myongjin ;
- Shin, Changhwan
- 2026-07-09
- Electronics (Basel)
- MDPI
Article
Source/drain epitaxial thickness scaling effects on DC performance and RC delay in stacked nanosheet gate-all-around FETs
- Lee, Hyunwoo ;
- Shin, Changhwan
- 2026-06-01
- Semiconductor Science and Technology
- IOP Publishing Ltd
Article
All-Oxide ITO/HZO/WO x Ferroelectric Tunnel Junctions with Oxygen-Engineered Interfaces for Highly Endurable Neuromorphic Computing
- Jeong, Seungjoon ;
- Shin, Huiseong ;
- Choi, Myeongjae ;
- Han, Changwoo ;
- Park, Hyeonjung ;
- ... Shin, Changhwan ;
- 외 2명
- 2026-04-15
- ACS Applied Materials & Interfaces
- AMER CHEMICAL SOC
Article
Low-Voltage and High-k Properties of Bilayer HZO Capacitors at the Morphotropic Phase Boundary for Next-Generation Memory Applications
- Kim, Junseok ;
- Park, Hyeonjung ;
- Han, Changwoo ;
- Shin, Huiseong ;
- Choi, Myeongjae ;
- ... Shin, Changhwan
- 2026-04-01
- Advanced Science
- WILEY-V C H VERLAG GMBH
Article
Reduced Leakage and Enhanced Endurance via an ITO Oxygen Reservoir Layer in HZO Ferroelectric Capacitors
- Choi, Haevin ;
- Park, Hyeonjung ;
- Han, Changwoo ;
- Choi, Myeongjae ;
- Choi, Yejoo ;
- ... Shin, Changhwan
- 2026-04
- IEEE Electron Device Letters
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Article
Ferroelectric Charging Tunnel Junctions: Resolving Transport Trade-Offs via Trap-Assisted Barrier Modulation for Physical Reservoir Computing
- Shin, Huiseong ;
- Choi, Myeongjae ;
- Kim, Junseok ;
- Jeong, Seungjoon ;
- Kim, Donghyeon ;
- ... Shin, Changhwan ;
- 외 4명
- 2026-03-31
- Advanced Functional Materials
- WILEY-V C H VERLAG GMBH
Article
Asymmetric Polarization in FE/AFE Bilayer HZO Memcapacitors via Composition-Induced Built-in Bias
- Kim, Junseok ;
- Shin, Huiseong ;
- Park, Hyeonjung ;
- Han, Changwoo ;
- Choi, Myeongjae ;
- ... Shin, Changhwan
- 2026-03-25
- ACS Applied Materials & Interfaces
- AMER CHEMICAL SOC
Article
Fast and energy-efficient resistive switching in ZrOx/TaOx bilayer structures under ultra-low voltage operation for next-generation memory applications
- Lee, Min Kyung ;
- Jeong, Jae-Seung ;
- Jung, Jaeho ;
- Seo, Hyun Kyu ;
- Shin, Changhwan ;
- 외 2명
- 2026-03-03
- Advanced Composites and Hybrid Materials
- SPRINGERNATURE
Article
Layered Trench Gate Exhibiting Source/Drain Over-Etch Immunity Without Punch-Through Stopper
- Jeong, Seungjoon ;
- Kim, Myongjin ;
- Lim, Subin ;
- Shin, Huiseong ;
- Shin, Changhwan
- 2026-03
- IEEE Transactions on Device and Materials Reliability
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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