Ferroelectric Field-Effect-Transistor Integrated with Ferroelectrics Heterostructure

초록

To address the demands of emerging data-centric computing applications, ferroelectric field-effect transistors (Fe-FETs) are considered the forefront of semiconductor electronics owing to their energy and area efficiency and merged logic-memory functionalities. Herein, the fabrication and application of an Fe-FET, which is integrated with a van der Waals ferroelectrics heterostructure (CuInP2S6/alpha-In2Se3), is reported. Leveraging enhanced polarization originating from the dipole coupling of CIPS and alpha-In2Se3, the fabricated Fe-FET exhibits a large memory window of 14.5 V at V-GS = +/- 10 V, reaching a memory window to sweep range of approximate to 72%. Piezoelectric force microscopy measurements confirm the enhanced polarization-induced wider hysteresis loop of the double-stacked ferroelectrics compared to single ferroelectric layers. The Landau-Khalatnikov theory is extended to analyze the ferroelectric characteristics of a ferroelectric heterostructure, providing detailed explanations of the hysteresis behaviors and enhanced memory window formation. The fabricated Fe-FET shows nonvolatile memory characteristics, with a high on/off current ratio of over 10(6), long retention time (>10(4) s), and stable cyclic endurance (>10(4) cycles). Furthermore, the applicability of the ferroelectrics heterostructure is investigated for artificial synapses and for hardware neural networks through training and inference simulation. These results provide a promising pathway for exploring low-dimensional ferroelectronics.

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