Self-Healing Magnetic Field-Assisted Threshold Switching Device Utilizing Dual Field-Driven Filamentary Physics

초록

"Advanced filamentary devices are crucial for developing low-power devices to implement high-speed logic and neuromorphic devices. Among these, HfO2-based filamentary devices have attracted attention as viable options due to their threshold-switching characteristics and compatibility with complementary metal-oxide-semiconductor (CMOS) technology. However, the unpredictability of conventional filament formation/rupture driven by an electric field challenges consistency and reliability. A paradigm shift from conventional stochastic electric field-driven ion migration to controllable ion-based transportation is essential to devise functional low-power devices capable of controlling the filament process. This work introduces a magnetic field-assisted threshold switching (MA-TS) device, which integrates a neodymium magnet and a nickel (Ni) barrier layer to enable controlled dual field-driven ion transportation. The dual field-driven process combining the conventional vertical electric field-driven ion migration with lateral magnetic field-driven ion transportation, reveals a distinctive aspect of ion movement. The MA-TS device achieves superior performances characterized by an ultra-low threshold voltage (≈0 V), minimized leakage current in the off-state, a variation-immune hysteresis-free characteristic, enhanced yield, and revival-ability (i.e., self-healing) after a failed TS operation. By overcoming the limitations of conventional filamentary devices, the MA-TS device opens up a promising avenue for efficient and stable low-power applications. © 2024 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.

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