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Impact of transparent electrode on photoresponse of ZnO-based phototransistor

Authors
Lee, SeunghyupAhn, Seung-EonJeon, YongwooAhn, Ji-HoonSong, IhunJeon, SanghunYun, Dong-JinKim, JungwooChoi, HyungChung, U-InPark, Jaechul
Issue Date
16-Dec-2013
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.103, no.25
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
103
Number
25
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/101282
DOI
10.1063/1.4855055
ISSN
0003-6951
Abstract
ZnO-based photo-thin film transistors with enhanced photoresponse were developed using transparent conductive oxide contacts. Changing the electrode from opaque Mo to transparent In-Zn-O increases the photocurrent by five orders of magnitude. By changing the opacity of each source and drain electrode, we could observe how the photoresponse is affected. We deduce that the photocurrent generation mechanism is based on an energy band change due to the photon irradiation. More importantly, we reveal that the photocurrent is determined by the energy barrier of injected electrons at the interface between the source electrode and the active layer. (C) 2013 AIP Publishing LLC.
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College of Science and Technology > Display Convergence in Division of Display and Semiconductor Physics > 1. Journal Articles

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