Analysis of the energy distribution of interface traps related to tunnel oxide degradation using charge pumping techniques for 3D NAND flash applications
DC Field | Value | Language |
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dc.contributor.author | An, Ho-Myoung | - |
dc.contributor.author | Kim, Hee-Dong | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.date.accessioned | 2021-09-05T18:16:22Z | - |
dc.date.available | 2021-09-05T18:16:22Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2013-12 | - |
dc.identifier.issn | 0025-5408 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/101396 | - |
dc.description.abstract | The energy distribution and density of interface traps (D-it) are directly investigated from bulk-type and thin-film transistor (TFT)-type charge trap flash memory cells with tunnel oxide degradation, under program/erase (P/E) cycling using a charge pumping (CP) technique, in view of application in a 3-demension stackable NAND flash memory cell. After PIE cycling in bulk-type devices, the interface trap density gradually increased from 1.55 x 10(12) cm(-2) eV(-1) to 3.66 x 10(13) cm(-2) eV(-1) due to tunnel oxide damage, which was consistent with the subthreshold swing and transconductance degradation after P/E cycling. Its distribution moved toward shallow energy levels with increasing cycling numbers, which coincided with the decay rate degradation with short-term retention time. The tendency extracted with the CP technique for At of the TFT-type cells was similar to those of bulk-type cells. (C) 2013 Elsevier Ltd. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Analysis of the energy distribution of interface traps related to tunnel oxide degradation using charge pumping techniques for 3D NAND flash applications | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.doi | 10.1016/j.materresbull.2013.05.008 | - |
dc.identifier.scopusid | 2-s2.0-84885950501 | - |
dc.identifier.wosid | 000327559700025 | - |
dc.identifier.bibliographicCitation | MATERIALS RESEARCH BULLETIN, v.48, no.12, pp.5084 - 5087 | - |
dc.relation.isPartOf | MATERIALS RESEARCH BULLETIN | - |
dc.citation.title | MATERIALS RESEARCH BULLETIN | - |
dc.citation.volume | 48 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 5084 | - |
dc.citation.endPage | 5087 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordAuthor | 3D NAND | - |
dc.subject.keywordAuthor | CTF | - |
dc.subject.keywordAuthor | SONOS | - |
dc.subject.keywordAuthor | Charge pumping technique | - |
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