Analysis of the energy distribution of interface traps related to tunnel oxide degradation using charge pumping techniques for 3D NAND flash applications
- Authors
- An, Ho-Myoung; Kim, Hee-Dong; Kim, Tae Geun
- Issue Date
- 12월-2013
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- 3D NAND; CTF; SONOS; Charge pumping technique
- Citation
- MATERIALS RESEARCH BULLETIN, v.48, no.12, pp.5084 - 5087
- Indexed
- SCIE
SCOPUS
- Journal Title
- MATERIALS RESEARCH BULLETIN
- Volume
- 48
- Number
- 12
- Start Page
- 5084
- End Page
- 5087
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/101396
- DOI
- 10.1016/j.materresbull.2013.05.008
- ISSN
- 0025-5408
- Abstract
- The energy distribution and density of interface traps (D-it) are directly investigated from bulk-type and thin-film transistor (TFT)-type charge trap flash memory cells with tunnel oxide degradation, under program/erase (P/E) cycling using a charge pumping (CP) technique, in view of application in a 3-demension stackable NAND flash memory cell. After PIE cycling in bulk-type devices, the interface trap density gradually increased from 1.55 x 10(12) cm(-2) eV(-1) to 3.66 x 10(13) cm(-2) eV(-1) due to tunnel oxide damage, which was consistent with the subthreshold swing and transconductance degradation after P/E cycling. Its distribution moved toward shallow energy levels with increasing cycling numbers, which coincided with the decay rate degradation with short-term retention time. The tendency extracted with the CP technique for At of the TFT-type cells was similar to those of bulk-type cells. (C) 2013 Elsevier Ltd. All rights reserved.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.