Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Numerical analysis of InGaN/GaN-based blue light-emitting diode with graded indium composition barriers
- Issue Date
- 12월-2013
- Publisher
- ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
- Keywords
- Efficiency droop; Light-emitting diodes; Numerical simulation; Internal quantum efficiency; Quantum well and barrier
- Citation
- SUPERLATTICES AND MICROSTRUCTURES, v.64, pp.1 - 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- SUPERLATTICES AND MICROSTRUCTURES
- Volume
- 64
- Start Page
- 1
- End Page
- 6
- ISSN
- 0749-6036
- Abstract
- In this study, we proposed and numerically investigated graded indium barrier structures of various compositions in InGaN/GaN-based light-emitting diodes (LEDs) to improve their optical and electrical properties. Our simulation results showed that when using an InGaN barrier structure with an up/down-graded indium composition, the output power and internal quantum efficiency of LEDs at 200 mA increased by 2.49 and 2.44 times, respectively, relative to the standard barrier structure. In addition, the proposed structure shows reduced turn-on voltage and reduced efficiency droop. These results are attributed to the improvement of both the hole injection efficiency and uniform carrier distribution within multiple quantum wells. (C) 2013 Elsevier Ltd. All rights reserved.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.