Static and low frequency noise characterization of N-type random network of carbon nanotubes thin film transistors
- Authors
- Joo, Min-Kyu; Mouis, Mireille; Jeon, Dae-Young; Kim, Gyu-Tae; Kim, Un Jeong; Ghibaudo, Gerard
- Issue Date
- 21-10월-2013
- Publisher
- AMER INST PHYSICS
- Keywords
- Carbon nanotubes; Capacitance; Percolation; Carrier mobility; Dielectrics; Electrical properties; Electrical resistivity; Field effect transistors; Low field transport; Silicon
- Citation
- JOURNAL OF APPLIED PHYSICS, v.114, no.15
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 114
- Number
- 15
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/101854
- DOI
- 10.1063/1.4825221
- ISSN
- 0021-8979
- Abstract
- Static and low frequency noise (LFN) characterizations in two-dimensional (2D) N-type random network thin film transistors (RN-TFTs) based on single-walled carbon nanotubes were presented. For the electrical parameter extraction, the Y-function method was used to suppress the series resistance (R-sd) influence. The gate-to-channel capacitance (C-gc) was directly measured by the split capacitance-to-voltage method and compared to 2D metal-plate capacitance model (C-2D). In addition, to account for the percolation-dominated 2D RN-TFTs, a numerical percolation simulation was performed. LFN measurements were also carried out and the results were well interpreted by the carrier number and correlated mobility fluctuation model. Finally, one-dimensional (1D) cylindrical analytical capacitance based model (C-1D) was suggested and applied to provide better consistency between all electrical parameters based on experimental and simulation results. (C) 2013 AIP Publishing LLC.
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