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SiGe 135-GHz amplifier with inductive positive feedback operating near f(max)
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Hyunchul | - |
| dc.contributor.author | Yun, Jongwon | - |
| dc.contributor.author | Song, Kiryong | - |
| dc.contributor.author | Rieh, Jae-Sung | - |
| dc.date.accessioned | 2021-09-05T21:48:44Z | - |
| dc.date.available | 2021-09-05T21:48:44Z | - |
| dc.date.created | 2021-06-15 | - |
| dc.date.issued | 2013-09-12 | - |
| dc.identifier.issn | 0013-5194 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/102168 | - |
| dc.description.abstract | A common base five-stage D-band amplifier developed in a 0.18-m SiGe HBT technology is presented. An inductive positive feedback technique is employed to enhance the gain, leading to 12.2 dB peak gain at 135 GHz with a power consumption of 67.2 mW. Measured output saturated power was - 5.8 dBm. The total chip area including pads is 1.54 x 0.56 mm(2). | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | INST ENGINEERING TECHNOLOGY-IET | - |
| dc.title | SiGe 135-GHz amplifier with inductive positive feedback operating near f(max) | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Rieh, Jae-Sung | - |
| dc.identifier.doi | 10.1049/el.2013.1660 | - |
| dc.identifier.scopusid | 2-s2.0-84884850983 | - |
| dc.identifier.wosid | 000328860200021 | - |
| dc.identifier.bibliographicCitation | ELECTRONICS LETTERS, v.49, no.19, pp.1229 - 1230 | - |
| dc.relation.isPartOf | ELECTRONICS LETTERS | - |
| dc.citation.title | ELECTRONICS LETTERS | - |
| dc.citation.volume | 49 | - |
| dc.citation.number | 19 | - |
| dc.citation.startPage | 1229 | - |
| dc.citation.endPage | 1230 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.subject.keywordAuthor | Ge-Si alloys | - |
| dc.subject.keywordAuthor | heterojunction bipolar transistors | - |
| dc.subject.keywordAuthor | millimetre wave amplifiers | - |
| dc.subject.keywordAuthor | power consumption | - |
| dc.subject.keywordAuthor | inductive positive feedback | - |
| dc.subject.keywordAuthor | five-stage D-band amplifier | - |
| dc.subject.keywordAuthor | HBT technology | - |
| dc.subject.keywordAuthor | inductive positive feedback technique | - |
| dc.subject.keywordAuthor | power consumption | - |
| dc.subject.keywordAuthor | frequency 135 GHz | - |
| dc.subject.keywordAuthor | power 67 | - |
| dc.subject.keywordAuthor | 2 mW | - |
| dc.subject.keywordAuthor | gain 12 | - |
| dc.subject.keywordAuthor | 2 dB | - |
| dc.subject.keywordAuthor | size 0 | - |
| dc.subject.keywordAuthor | 18 mum | - |
| dc.subject.keywordAuthor | SiGe | - |
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