Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
SiGe 135-GHz amplifier with inductive positive feedback operating near f(max)
- Authors
- Kim, Hyunchul; Yun, Jongwon; Song, Kiryong; Rieh, Jae-Sung
- Issue Date
- 12-9월-2013
- Publisher
- INST ENGINEERING TECHNOLOGY-IET
- Keywords
- Ge-Si alloys; heterojunction bipolar transistors; millimetre wave amplifiers; power consumption; inductive positive feedback; five-stage D-band amplifier; HBT technology; inductive positive feedback technique; power consumption; frequency 135 GHz; power 67; 2 mW; gain 12; 2 dB; size 0; 18 mum; SiGe
- Citation
- ELECTRONICS LETTERS, v.49, no.19, pp.1229 - 1230
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTRONICS LETTERS
- Volume
- 49
- Number
- 19
- Start Page
- 1229
- End Page
- 1230
- ISSN
- 0013-5194
- Abstract
- A common base five-stage D-band amplifier developed in a 0.18-m SiGe HBT technology is presented. An inductive positive feedback technique is employed to enhance the gain, leading to 12.2 dB peak gain at 135 GHz with a power consumption of 67.2 mW. Measured output saturated power was - 5.8 dBm. The total chip area including pads is 1.54 x 0.56 mm(2).
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.