Coexistence of magnetic domains with in-plane and out-of-plane anisotropy in a single GaMnAs film
- Authors
- Lee, Sangyeop; Lee, Hakjoon; Yoo, Taehee; Lee, Sanghoon; Liu, X.; Furdyna, J. K.
- Issue Date
- 1-9월-2013
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Characterization; Molecular beam epitaxy; Magnetic materials; Semiconducting III-V materials
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.378, pp.337 - 341
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 378
- Start Page
- 337
- End Page
- 341
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/102191
- DOI
- 10.1016/j.jcrysgro.2012.12.063
- ISSN
- 0022-0248
- Abstract
- Magnetic anisotropy of the ferromagnetic semiconductor GaMnAs film grown on a (0 0 1) GaAs substrate was investigated by using Hall effect and magnetization measurements. When field strength was swept at a fixed direction in the film plane, abrupt transitions in the Hall resistance appeared while reducing the field strength even before the field direction is reversed. We show that this phenomenon is related to the presence of magnetic domains with a vertical easy axis in the film, as identified via Hall measurements performed with a field applied normal to the plane. The coexistence of magnetic domains with both in-pane and out-of-plane anisotropies in a single film was further confirmed by direct measurement of the corresponding magnetization components of the film. (c) 2012 Elsevier B.V. All rights reserved.
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Collections - College of Science > Department of Physics > 1. Journal Articles
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