Planar Hall effect in a single GaMnAs film grown on Si substrate
DC Field | Value | Language |
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dc.contributor.author | Won, Jaehyuk | - |
dc.contributor.author | Shin, Jinsik | - |
dc.contributor.author | Lee, Sangyeop | - |
dc.contributor.author | Lee, Hakjoon | - |
dc.contributor.author | Yoo, Taehee | - |
dc.contributor.author | Lee, Sanghoon | - |
dc.contributor.author | Liu, X. | - |
dc.contributor.author | Furdyna, J. K. | - |
dc.date.accessioned | 2021-09-05T21:54:54Z | - |
dc.date.available | 2021-09-05T21:54:54Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2013-09-01 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/102198 | - |
dc.description.abstract | We carried out systematic planar Hall effect (PHE) measurements on a layer of GaMnAs grown on a Si substrate. The field scans of the planar Hall resistance (PHR) data obtained at 4 K show a transition behavior, which is similar to the magnetization reorientation process often observed in GaMnAs film grown on a GaAs substrate that has both anisotropies along the < 100 > and the < 110 > directions. The dependence of the PHR on the applied field direction revealed the presence of an asymmetry between the < 100 > and the < 110 > directions in the magnetic energy of the film. The directions of the magnetic easy axes determined by the PHR value at zero field were about 9 degrees away from the < 110 > directions. The PHR further shows the absence of the difference in the anisotropy between the < 110 > directions, indicating no preference of magnetic anisotropy for either the [110] or the [(1) over bar 10] direction in the GaMnAs grown on a Si substrate. (c) 2012 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | FERROMAGNETISM | - |
dc.subject | MN)AS | - |
dc.subject | (GA | - |
dc.title | Planar Hall effect in a single GaMnAs film grown on Si substrate | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Sanghoon | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2012.12.062 | - |
dc.identifier.scopusid | 2-s2.0-84885419926 | - |
dc.identifier.wosid | 000323355900090 | - |
dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.378, pp.361 - 364 | - |
dc.relation.isPartOf | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.volume | 378 | - |
dc.citation.startPage | 361 | - |
dc.citation.endPage | 364 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | FERROMAGNETISM | - |
dc.subject.keywordPlus | MN)AS | - |
dc.subject.keywordPlus | (GA | - |
dc.subject.keywordAuthor | Characterization | - |
dc.subject.keywordAuthor | Molecular beam epitaxy | - |
dc.subject.keywordAuthor | Gallium compounds | - |
dc.subject.keywordAuthor | Semiconducting III-VI materials | - |
dc.subject.keywordAuthor | Magnetic materials | - |
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