Planar Hall effect in a single GaMnAs film grown on Si substrate
- Authors
- Won, Jaehyuk; Shin, Jinsik; Lee, Sangyeop; Lee, Hakjoon; Yoo, Taehee; Lee, Sanghoon; Liu, X.; Furdyna, J. K.
- Issue Date
- 1-9월-2013
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Characterization; Molecular beam epitaxy; Gallium compounds; Semiconducting III-VI materials; Magnetic materials
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.378, pp.361 - 364
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 378
- Start Page
- 361
- End Page
- 364
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/102198
- DOI
- 10.1016/j.jcrysgro.2012.12.062
- ISSN
- 0022-0248
- Abstract
- We carried out systematic planar Hall effect (PHE) measurements on a layer of GaMnAs grown on a Si substrate. The field scans of the planar Hall resistance (PHR) data obtained at 4 K show a transition behavior, which is similar to the magnetization reorientation process often observed in GaMnAs film grown on a GaAs substrate that has both anisotropies along the < 100 > and the < 110 > directions. The dependence of the PHR on the applied field direction revealed the presence of an asymmetry between the < 100 > and the < 110 > directions in the magnetic energy of the film. The directions of the magnetic easy axes determined by the PHR value at zero field were about 9 degrees away from the < 110 > directions. The PHR further shows the absence of the difference in the anisotropy between the < 110 > directions, indicating no preference of magnetic anisotropy for either the [110] or the [(1) over bar 10] direction in the GaMnAs grown on a Si substrate. (c) 2012 Elsevier B.V. All rights reserved.
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