Memory Characteristics of Doubly Stacked Nano-Floating Gate Memory Devices with Channels of Single ZnO Nanowires
DC Field | Value | Language |
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dc.contributor.author | Kim, Sungsu | - |
dc.contributor.author | Cho, Kyoungah | - |
dc.contributor.author | Kwak, Kiyeol | - |
dc.contributor.author | Kim, Sangsig | - |
dc.date.accessioned | 2021-09-05T22:10:20Z | - |
dc.date.available | 2021-09-05T22:10:20Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2013-09 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/102292 | - |
dc.description.abstract | We present in this paper the memory characteristics of doubly stacked nonvolatile nano-floating gate memory (NFGM) devices with channels of single ZnO nanowires. In our doubly stacked NFGM devices, first- and second-stage floating gate layers composed of Al nanoparticles (NPs) are separated with a 3-nm-thick interlayer of Al2O3. The average size of Al NPs created by sputtering is about 7 nm, and the Al NPs are isolated from each other laterally in the same layer as well as vertically in the double layers. When the voltage is swept from 10 to -10 V, the flat-band voltage shifts are about 0.8 and 2.5 V for the singly and doubly stacked MOS capacitors, respectively. The comparison of metal-oxide-semiconductor capacitors embedded with singly and doubly stacked, nanoparticle layers reveals that the retention characteristics of the doubly stacked NFGM device are superior to those of a singly stacked NFGM device. Furthermore, the memory characteristics of the doubly stacked NFGM device remain even after 105 programming and erasing cycles. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | NONVOLATILE MEMORY | - |
dc.subject | FABRICATION | - |
dc.title | Memory Characteristics of Doubly Stacked Nano-Floating Gate Memory Devices with Channels of Single ZnO Nanowires | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.identifier.doi | 10.1166/jnn.2013.7692 | - |
dc.identifier.scopusid | 2-s2.0-84885463396 | - |
dc.identifier.wosid | 000323628900046 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.13, no.9, pp.6196 - 6198 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 13 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 6196 | - |
dc.citation.endPage | 6198 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | NONVOLATILE MEMORY | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordAuthor | Floating Gate Memory | - |
dc.subject.keywordAuthor | Al Nanoparticle | - |
dc.subject.keywordAuthor | ZnO Nanowire | - |
dc.subject.keywordAuthor | Doubly Stacked Memory | - |
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