Memory Characteristics of Doubly Stacked Nano-Floating Gate Memory Devices with Channels of Single ZnO Nanowires
- Authors
- Kim, Sungsu; Cho, Kyoungah; Kwak, Kiyeol; Kim, Sangsig
- Issue Date
- 9월-2013
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Floating Gate Memory; Al Nanoparticle; ZnO Nanowire; Doubly Stacked Memory
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.13, no.9, pp.6196 - 6198
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 13
- Number
- 9
- Start Page
- 6196
- End Page
- 6198
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/102292
- DOI
- 10.1166/jnn.2013.7692
- ISSN
- 1533-4880
- Abstract
- We present in this paper the memory characteristics of doubly stacked nonvolatile nano-floating gate memory (NFGM) devices with channels of single ZnO nanowires. In our doubly stacked NFGM devices, first- and second-stage floating gate layers composed of Al nanoparticles (NPs) are separated with a 3-nm-thick interlayer of Al2O3. The average size of Al NPs created by sputtering is about 7 nm, and the Al NPs are isolated from each other laterally in the same layer as well as vertically in the double layers. When the voltage is swept from 10 to -10 V, the flat-band voltage shifts are about 0.8 and 2.5 V for the singly and doubly stacked MOS capacitors, respectively. The comparison of metal-oxide-semiconductor capacitors embedded with singly and doubly stacked, nanoparticle layers reveals that the retention characteristics of the doubly stacked NFGM device are superior to those of a singly stacked NFGM device. Furthermore, the memory characteristics of the doubly stacked NFGM device remain even after 105 programming and erasing cycles.
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