Forming-free SiN-based resistive switching memory prepared by RF sputtering
DC Field | Value | Language |
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dc.contributor.author | Kim, Hee-Dong | - |
dc.contributor.author | An, Ho-Myoung | - |
dc.contributor.author | Hong, Seok Man | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.date.accessioned | 2021-09-05T22:19:44Z | - |
dc.date.available | 2021-09-05T22:19:44Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2013-09 | - |
dc.identifier.issn | 1862-6300 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/102347 | - |
dc.description.abstract | A forming-free SiN-based resistive switching memory (RSM) device has been successfully realized using an RF sputtering method. With a 10-nm thick SiN film, the memory device showed forming-free switching behavior under +/- 2V/100ns. The conduction mechanisms at low- and high-resistance states were verified by Ohmic behavior and modified space-charge-limited conduction, respectively. In a reliability test, the device exhibits good endurance over 10(9) cycles and long data retention over 10(5)s at 85 degrees C. These results demonstrate that SiN-based RSM devices can be readily available without forming processes using an RF sputtering method. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Forming-free SiN-based resistive switching memory prepared by RF sputtering | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.doi | 10.1002/pssa.201329021 | - |
dc.identifier.scopusid | 2-s2.0-84884988412 | - |
dc.identifier.wosid | 000327864700020 | - |
dc.identifier.bibliographicCitation | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.210, no.9, pp.1822 - 1827 | - |
dc.relation.isPartOf | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | - |
dc.citation.title | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | - |
dc.citation.volume | 210 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 1822 | - |
dc.citation.endPage | 1827 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordAuthor | memory | - |
dc.subject.keywordAuthor | PECVD | - |
dc.subject.keywordAuthor | resistive switching | - |
dc.subject.keywordAuthor | Si3N4 | - |
dc.subject.keywordAuthor | sputtering | - |
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