Forming-free SiN-based resistive switching memory prepared by RF sputtering
- Authors
- Kim, Hee-Dong; An, Ho-Myoung; Hong, Seok Man; Kim, Tae Geun
- Issue Date
- 9월-2013
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- memory; PECVD; resistive switching; Si3N4; sputtering
- Citation
- PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.210, no.9, pp.1822 - 1827
- Indexed
- SCIE
SCOPUS
- Journal Title
- PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Volume
- 210
- Number
- 9
- Start Page
- 1822
- End Page
- 1827
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/102347
- DOI
- 10.1002/pssa.201329021
- ISSN
- 1862-6300
- Abstract
- A forming-free SiN-based resistive switching memory (RSM) device has been successfully realized using an RF sputtering method. With a 10-nm thick SiN film, the memory device showed forming-free switching behavior under +/- 2V/100ns. The conduction mechanisms at low- and high-resistance states were verified by Ohmic behavior and modified space-charge-limited conduction, respectively. In a reliability test, the device exhibits good endurance over 10(9) cycles and long data retention over 10(5)s at 85 degrees C. These results demonstrate that SiN-based RSM devices can be readily available without forming processes using an RF sputtering method. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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