ZrO2 dielectric-based low-voltage organic thin-film inverters
- Authors
- Oh, Jeong-Do; Seo, Hoon-Seok; Shin, Eun-Sol; Kim, Dae-Kyu; Ha, Young-Geun; Choi, Jong-Ho
- Issue Date
- 5-8월-2013
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.103, no.6
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 103
- Number
- 6
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/102482
- DOI
- 10.1063/1.4818269
- ISSN
- 0003-6951
- Abstract
- In this paper, the authors first report ZrO2-dielectric based low-voltage organic thin-film complementary metal-oxide semiconductor inverters. Two active layers of p-type pentacene and n-type N,N'-dioctyl-3,4,9,10-perylenedicarboximide were successively deposited on the thermally stable, transparent ZrO2 using the neutral cluster beam deposition method. Based on the good balance between p-and n-type transistors, the complementary inverters exhibited ideal characteristics including sharp inversions, complete switching, high gains, and large voltage swings at low operating voltage levels. (C) 2013 AIP Publishing LLC.
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Collections - College of Science > Department of Chemistry > 1. Journal Articles
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