Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers
DC Field | Value | Language |
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dc.contributor.author | Yu, Hyun-Yong | - |
dc.contributor.author | Battal, Enes | - |
dc.contributor.author | Okyay, Ali Kemal | - |
dc.contributor.author | Shim, Jaewoo | - |
dc.contributor.author | Park, Jin-Hong | - |
dc.contributor.author | Baek, Jung Woo | - |
dc.contributor.author | Saraswat, Krishna C. | - |
dc.date.accessioned | 2021-09-05T23:11:00Z | - |
dc.date.available | 2021-09-05T23:11:00Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2013-08 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/102545 | - |
dc.description.abstract | We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ process, modeling combined growth and diffusion events. The activation energy and pre-exponential factor for phosphorus (P) diffusion are determined to be 1.91 eV and 3.75 x 10(-5) cm(2)/s. These results show that P in-situ doping diffusivity is low enough to form shallow junctions for high performance Ge devices. (C) 2013 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.subject | GE LAYERS | - |
dc.subject | DIFFUSION | - |
dc.subject | ACTIVATION | - |
dc.subject | IMPLANTATION | - |
dc.subject | BORON | - |
dc.title | Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
dc.identifier.doi | 10.1016/j.cap.2013.02.021 | - |
dc.identifier.scopusid | 2-s2.0-84877582836 | - |
dc.identifier.wosid | 000318568800021 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.13, no.6, pp.1060 - 1063 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 13 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 1060 | - |
dc.citation.endPage | 1063 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001794006 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | GE LAYERS | - |
dc.subject.keywordPlus | DIFFUSION | - |
dc.subject.keywordPlus | ACTIVATION | - |
dc.subject.keywordPlus | IMPLANTATION | - |
dc.subject.keywordPlus | BORON | - |
dc.subject.keywordAuthor | In-situ | - |
dc.subject.keywordAuthor | Germanium | - |
dc.subject.keywordAuthor | Diffusivity | - |
dc.subject.keywordAuthor | Activation energy | - |
dc.subject.keywordAuthor | Phosphorus | - |
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