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Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers
- Authors
- Yu, Hyun-Yong; Battal, Enes; Okyay, Ali Kemal; Shim, Jaewoo; Park, Jin-Hong; Baek, Jung Woo; Saraswat, Krishna C.
- Issue Date
- 8월-2013
- Publisher
- ELSEVIER
- Keywords
- In-situ; Germanium; Diffusivity; Activation energy; Phosphorus
- Citation
- CURRENT APPLIED PHYSICS, v.13, no.6, pp.1060 - 1063
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 13
- Number
- 6
- Start Page
- 1060
- End Page
- 1063
- ISSN
- 1567-1739
- Abstract
- We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ process, modeling combined growth and diffusion events. The activation energy and pre-exponential factor for phosphorus (P) diffusion are determined to be 1.91 eV and 3.75 x 10(-5) cm(2)/s. These results show that P in-situ doping diffusivity is low enough to form shallow junctions for high performance Ge devices. (C) 2013 Elsevier B.V. All rights reserved.
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