Resistive switching characteristics of sol-gel based ZnO nanorods fabricated on flexible substrates
- Authors
- Park, Soyun; Lee, Jae Hyuk; Kim, Hee-Dong; Hong, Seok Man; An, Ho-Myoung; Kim, Tae Geun
- Issue Date
- 7월-2013
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- resistive switching; ZnO; nanorods; sol-gel method
- Citation
- PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.7, no.7, pp.493 - 496
- Indexed
- SCIE
SCOPUS
- Journal Title
- PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
- Volume
- 7
- Number
- 7
- Start Page
- 493
- End Page
- 496
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/102788
- DOI
- 10.1002/pssr.201307187
- ISSN
- 1862-6254
- Abstract
- The authors report the resistive switching characteristics of sol-gel based ZnO nanorods (NRs) fabricated on flexible substrates. A resistance ratio of 10, endurance of over 100 cycles, and narrower dispersion in the ON/OFF voltages and resistances compared to ZnO thin-film devices are demonstrated. Furthermore, the resistive switching characteristics on flexible substrates are maintained under severe substrate bending because of the ductile properties of the nanorods. Devices composed of the Au/sol-gel based NRs/Au structure have the potential for low-temperature flexible nonvolatile memory applications. (c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.