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Resistive switching characteristics of sol-gel based ZnO nanorods fabricated on flexible substrates

Authors
Park, SoyunLee, Jae HyukKim, Hee-DongHong, Seok ManAn, Ho-MyoungKim, Tae Geun
Issue Date
7월-2013
Publisher
WILEY-V C H VERLAG GMBH
Keywords
resistive switching; ZnO; nanorods; sol-gel method
Citation
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.7, no.7, pp.493 - 496
Indexed
SCIE
SCOPUS
Journal Title
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Volume
7
Number
7
Start Page
493
End Page
496
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/102788
DOI
10.1002/pssr.201307187
ISSN
1862-6254
Abstract
The authors report the resistive switching characteristics of sol-gel based ZnO nanorods (NRs) fabricated on flexible substrates. A resistance ratio of 10, endurance of over 100 cycles, and narrower dispersion in the ON/OFF voltages and resistances compared to ZnO thin-film devices are demonstrated. Furthermore, the resistive switching characteristics on flexible substrates are maintained under severe substrate bending because of the ductile properties of the nanorods. Devices composed of the Au/sol-gel based NRs/Au structure have the potential for low-temperature flexible nonvolatile memory applications. (c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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