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High post-annealing stability in [Pt/Co] multilayers
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Tae Young | - |
| dc.contributor.author | Son, Dong Su | - |
| dc.contributor.author | Lim, Sang Ho | - |
| dc.contributor.author | Lee, Seong-Rae | - |
| dc.date.accessioned | 2021-09-06T00:42:30Z | - |
| dc.date.available | 2021-09-06T00:42:30Z | - |
| dc.date.created | 2021-06-14 | - |
| dc.date.issued | 2013-06-07 | - |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/102983 | - |
| dc.description.abstract | The [Pt/Co] multilayers with a very thin Pt layer of 0.2 nm are presented that exhibit strong perpendicular magnetic anisotropy (PMA) even after annealing up to 500 degrees C. The observed post-annealing stability is in significant contrast to that previously shown for conventional multilayers with a thicker Pt layer than Co, where good PMA properties are obtained in the as-deposited state but they deteriorate significantly at moderate annealing temperatures below similar to 300 degrees C. The reason for the high post-annealing stability is a low level of intermixing during sputtering due to the very thin Pt layer. (C) 2013 AIP Publishing LLC. | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.subject | MAGNETIC TUNNEL-JUNCTIONS | - |
| dc.subject | PERPENDICULAR-ANISOTROPY | - |
| dc.subject | ROOM-TEMPERATURE | - |
| dc.subject | MAGNETORESISTANCE | - |
| dc.subject | FILMS | - |
| dc.subject | BARRIER | - |
| dc.title | High post-annealing stability in [Pt/Co] multilayers | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Lim, Sang Ho | - |
| dc.contributor.affiliatedAuthor | Lee, Seong-Rae | - |
| dc.identifier.doi | 10.1063/1.4809130 | - |
| dc.identifier.scopusid | 2-s2.0-84879366513 | - |
| dc.identifier.wosid | 000320674500103 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.113, no.21 | - |
| dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
| dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
| dc.citation.volume | 113 | - |
| dc.citation.number | 21 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | MAGNETIC TUNNEL-JUNCTIONS | - |
| dc.subject.keywordPlus | PERPENDICULAR-ANISOTROPY | - |
| dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
| dc.subject.keywordPlus | MAGNETORESISTANCE | - |
| dc.subject.keywordPlus | FILMS | - |
| dc.subject.keywordPlus | BARRIER | - |
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Related Researcher
- LIM, Sang Ho
- College of Engineering (Department of Materials Science and Engineering)