Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter
DC Field | Value | Language |
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dc.contributor.author | Lee, In-Yeal | - |
dc.contributor.author | Park, Hyung-Youl | - |
dc.contributor.author | Park, Jin-Hyung | - |
dc.contributor.author | Lee, Jinyeong | - |
dc.contributor.author | Jung, Woo-Shik | - |
dc.contributor.author | Yu, Hyun-Yong | - |
dc.contributor.author | Kim, Sang-Woo | - |
dc.contributor.author | Kim, Gil-Ho | - |
dc.contributor.author | Park, Jin-Hong | - |
dc.date.accessioned | 2021-09-06T00:47:40Z | - |
dc.date.available | 2021-09-06T00:47:40Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2013-06 | - |
dc.identifier.issn | 1566-1199 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/103015 | - |
dc.description.abstract | In this paper, chemical n-type doping process of graphene using hydrazine monohydrate solution (N2H4-H2O) is demonstrated. This method successfully modulates the Dirac point of pristine graphene by adjusting the concentration of hydrazine solution and also provides an effective n-type doping in graphene. First, the hydrazine treated and pristine graphene films are systematically investigated by Raman and FT-IR spectroscopy. Second, with p-and n-channel FETs fabricated on both pristine and hydrazine treated n-type graphene, complementary graphene inverter is demonstrated. (C) 2013 Elsevier B. V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
dc.identifier.doi | 10.1016/j.orgel.2013.03.022 | - |
dc.identifier.scopusid | 2-s2.0-84876189370 | - |
dc.identifier.wosid | 000318911000020 | - |
dc.identifier.bibliographicCitation | ORGANIC ELECTRONICS, v.14, no.6, pp.1586 - 1590 | - |
dc.relation.isPartOf | ORGANIC ELECTRONICS | - |
dc.citation.title | ORGANIC ELECTRONICS | - |
dc.citation.volume | 14 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 1586 | - |
dc.citation.endPage | 1590 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | Graphene | - |
dc.subject.keywordAuthor | N-doping | - |
dc.subject.keywordAuthor | Hydrazine | - |
dc.subject.keywordAuthor | Inverter | - |
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