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Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter
- Authors
- Lee, In-Yeal; Park, Hyung-Youl; Park, Jin-Hyung; Lee, Jinyeong; Jung, Woo-Shik; Yu, Hyun-Yong; Kim, Sang-Woo; Kim, Gil-Ho; Park, Jin-Hong
- Issue Date
- 6월-2013
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Graphene; N-doping; Hydrazine; Inverter
- Citation
- ORGANIC ELECTRONICS, v.14, no.6, pp.1586 - 1590
- Indexed
- SCIE
SCOPUS
- Journal Title
- ORGANIC ELECTRONICS
- Volume
- 14
- Number
- 6
- Start Page
- 1586
- End Page
- 1590
- ISSN
- 1566-1199
- Abstract
- In this paper, chemical n-type doping process of graphene using hydrazine monohydrate solution (N2H4-H2O) is demonstrated. This method successfully modulates the Dirac point of pristine graphene by adjusting the concentration of hydrazine solution and also provides an effective n-type doping in graphene. First, the hydrazine treated and pristine graphene films are systematically investigated by Raman and FT-IR spectroscopy. Second, with p-and n-channel FETs fabricated on both pristine and hydrazine treated n-type graphene, complementary graphene inverter is demonstrated. (C) 2013 Elsevier B. V. All rights reserved.
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Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
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