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High-Performance Amorphous Indium Oxide Thin-Film Transistors Fabricated by an Aqueous Solution Process at Low Temperature
- Authors
- Choi, Kookhyun; Kim, Minseok; Chang, Seongpil; Oh, Tae-Yeon; Jeong, Shin Woo; Ha, Hyeon Jun; Ju, Byeong-Kwon
- Issue Date
- Jun-2013
- Publisher
- IOP PUBLISHING LTD
- Keywords
- Transparent electronics; Oxide thin film transistor
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.6
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 52
- Number
- 6
- ISSN
- 0021-4922
- Abstract
- This paper presents low temperature solution-processed fabrication techniques for modern thin-film transistors (TFTs). We have investigated the electrical performance of aqueous solution-processed amorphous indium oxide (a-In2O3) TFTs prepared using different annealing temperatures. Even though the a-In2O3 TFTs were annealed at 200 degrees C, electrical characteristics of aqueous solution-processed a-In2O3 TFTs were obtained. High performance such as a saturation mobility of 8.6 cm(2) V-1 s(-1) and an on/off current ratio of over 10(6) was exhibited by a-In2O3 TFTs annealed at 250 degrees C. (c) The Japan Society of Applied Physics
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Related Researcher
- Ju, Byeong kwon
- College of Engineering (School of Electrical Engineering)