A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells
- Authors
- Park, Hyunik; Baik, Kwang Hyeon; Kim, Jihyun; Ren, Fan; Pearton, Stephen J.
- Issue Date
- 20-5월-2013
- Publisher
- OPTICAL SOC AMER
- Citation
- OPTICS EXPRESS, v.21, no.10, pp.12908 - 12913
- Indexed
- SCIE
SCOPUS
- Journal Title
- OPTICS EXPRESS
- Volume
- 21
- Number
- 10
- Start Page
- 12908
- End Page
- 12913
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/103216
- DOI
- 10.1364/OE.21.012908
- ISSN
- 1094-4087
- Abstract
- We report on a simple and reproducible method for fabricating InGaN/GaN multi-quantum-well (MQW) nanorod light-emitting diodes (LEDs), prepared by combining a SiO2 nanosphere lithography and dryetch process. Focused-ion-beam (FIB)-deposited Pt was contacted to both ends of the nanorod LEDs, producing bright electroluminescence from the LEDs under forward bias conditions. The turn-on voltage in these nanorod LEDs was higher (13 V) than in companion thin film devices (3 V) and this can be attributed to the high contact resistance between the FIB-deposited Pt and nanorod LEDs and the damage induced by inductively-coupled plasma and Ga+ -ions. Our method to obtain uniform MQW nanorod LEDs shows promise for improving the reproducibility of nano-optoelectronics. (C) 2013 Optical Society of America
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Collections - College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
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