Insertion of nanocrystalline diamond film and the addition of hydrogen gas during deposition for adhesion improvement of cubic boron nitride thin film deposited by unbalanced magnetron sputtering method
- Authors
- Ko, J. -S.; Park, J. -K.; Lee, W. -S.; Huh, J. -Y.; Baik, Y. -J.
- Issue Date
- 1-5월-2013
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Cubic boron nitride; Hydrogen addition; Nanocrystalline diamond buffer; Unbalanced magnetron sputtering; Residual stress reduction; Delamination; Interfacial layer; Adherent thick film
- Citation
- THIN SOLID FILMS, v.534, pp.380 - 383
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 534
- Start Page
- 380
- End Page
- 383
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/103263
- DOI
- 10.1016/j.tsf.2013.02.058
- ISSN
- 0040-6090
- Abstract
- Cubic boron nitride (c-BN) thick film growth was attempted by the addition of hydrogen for residual stress reduction and by using a nanocrystalline diamond (NCD) buffer layer for stabilizing the turbostratic boron nitride interfacial layer. The c-BN films were deposited by the unbalanced magnetron sputtering method. Thin (100 mu m) Si strips (3 x 40 mm(2)) were used as substrates. A boron nitride target was used, which was connected to a radio frequency power supply at 400 W. High frequency power connected to a substrate holder was used for self-biasing of -40 V. The deposition pressure was 0.27 Pa with a flow of Ar (18 sccm)-N-2 (2 sccm) mixed gas. Hydrogen gas of 2 sccm was added to the Ar-N-2 mixed gas. The effect of the addition time of the hydrogen to the Ar-N-2 gas during deposition was investigated and found to be critical to the occurrence of the delamination of the c-BN film on the NCD buffer layer. As the addition of the hydrogen was delayed, the delamination started later. C-BN film of 3 mu m thickness adherent to the substrate was obtained. (C) 2013 Elsevier B.V. All rights reserved.
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