Low field magnetization reversal behavior in GaMnAs films
- Authors
- Gwon, Yoonjung; Byeon, Hyehyeon; Won, Jaehyuk; Lee, Hakjoon; Lee, Sanghoon; Liu, X.; Furdyna, J. K.
- Issue Date
- 5월-2013
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Ferromagnetic semiconductor; Planar Hall effect; Pinning field; Anisotropy
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.62, no.10, pp.1473 - 1478
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 62
- Number
- 10
- Start Page
- 1473
- End Page
- 1478
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/103311
- DOI
- 10.3938/jkps.62.1473
- ISSN
- 0374-4884
- Abstract
- The magnetization reversal process of a GaMnAs film has been investigated by using the planar Hall effect. The angle-dependent measurements of the planar Hall resistance that were performed with a field smaller than 60 Oe displayed new intermediate stable resistance values during the rotation of the external field direction over 360A degrees. This phenomenon was understood by considering the formation of the multi-domain, whose magnetizations lie along two magnetic easy axes, and the differences in the domain-pinning fields that required for the transition between two easy axes. We further showed that the relative populations of the magnetic domains corresponding to the two orthogonal easy axes can be controlled by the value of the applied field during the process of magnetization reversal.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Science > Department of Physics > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.