Methane detection using Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes
- Authors
- Xi, Yuyin; Liu, Lu; Ren, Fan; Pearton, Stephen J.; Kim, Jihyun; Dabiran, Amir; Chow, Peter P.
- Issue Date
- 5월-2013
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.31, no.3
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- Volume
- 31
- Number
- 3
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/103324
- DOI
- 10.1116/1.4803743
- ISSN
- 1071-1023
- Abstract
- Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes were employed to detect methane. A detection sensitivity >100 was obtained for the diodes under reverse bias, and this was one order of magnitude higher than the sensitivity of the diodes operated under forward bias. A new method to extract the response time was demonstrated by taking the derivative of diode current, allowing a reduction in the sensor response time by 80%. Methane sensing experiments were conducted at different temperatures, and an Arrhenius plot of the data determined an activation energy of 57 kJ/mol for the sensing process. (C) 2013 American Vacuum Society.
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Collections - College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
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