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Photocurrent Characteristics of HgTe Nanoparticle Films-Si Nanowires Heterojunctions Made Using a Simple Transfer-Dropping Method
- Authors
- Park, Sukhyung; Cho, Kyoungah; Kim, Sangsig
- Issue Date
- May-2013
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- pn Heterojunction; Silicon Nanowire; Nanoparticle; Photocurrent
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.13, no.5, pp.3539 - 3541
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 13
- Number
- 5
- Start Page
- 3539
- End Page
- 3541
- ISSN
- 1533-4880
- Abstract
- In this study, pn heterojunction diodes are constructed with p-type HgTe nanoparticle (NP) films dropped by a nanoplotter and n-type Si nanowires (NWs) transferred onto plastic substrates and their optoelectronic characteristics are investigated under the illumination of 633-nm wavelength light. The rectification ratio when light is irradiated on the diode is twice that in the dark. The photocurrent efficiency of the diode at a bias voltage of 2.5 V is determined to be 0.41 mu A/W, which is greater than that of the transferred Si NWs.
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Related Researcher
- Kim, Sang sig
- College of Engineering (School of Electrical Engineering)