Penetration depth profiling of proton-irradiated 4H-SiC at 6 MeV and 8 MeV by micro-Raman spectroscopy
- Authors
- Kim, Hong-Yeol; Kim, Jihyun; Freitas, Jaime A., Jr.
- Issue Date
- 1-4월-2013
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- 4H-SiC; Proton irradiation; Raman spectroscopy
- Citation
- APPLIED SURFACE SCIENCE, v.270, pp.44 - 48
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED SURFACE SCIENCE
- Volume
- 270
- Start Page
- 44
- End Page
- 48
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/103532
- DOI
- 10.1016/j.apsusc.2012.12.014
- ISSN
- 0169-4332
- Abstract
- 4H-SiC samples irradiated with high energy protons were probed by low temperature photoluminescence (PL) and room temperature micro-Raman scattering spectroscopies. The quench of the near band-edge emission and the presence of a number of new sharp lines in the luminescence spectra of the proton-irradiated samples confirm the formation of various new defects. The changes of the line-shape and peak position of the longitudinal optical phonon-plasmon coupled (LOPC) mode in 4H-SiC are consistent with the decrease in the free carrier concentrations due to the introduction of carrier traps induced by the high energy proton irradiation. The estimated penetration depths for 6 and 8 MeV energy proton were 180 mu m and 300 mu m, respectively, which are in good agreement with the Monte Carlo numerical simulation results. At the 180 mu m and 300 mu m depths, the carrier concentrations were reduced by approximately 34% and 21%, respectively. (c) 2012 Elsevier B.V. All rights reserved.
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