Critical switching current and thermal stability of magnetic tunnel junctions with uncompensated CoFeB/Ru/CoFeB synthetic free layers
- Authors
- Lee, Tae Young; Ahn, Chiyui; Min, Byoung-Chul; Shin, Kyung-Ho; Lee, Jong Min; Lee, Kyung-Jin; Lim, Sang Ho; Park, Seung-Young; Jo, Younghun; Langer, Juergen; Ocker, Berthold; Maass, Wolfram
- Issue Date
- 7-3월-2013
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.113, no.9
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 113
- Number
- 9
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/103751
- DOI
- 10.1063/1.4794340
- ISSN
- 0021-8979
- Abstract
- The critical switching current and thermal stability parameter are investigated for magnetic tunnel junctions with uncompensated synthetic ferrimagnetic free layers. The parameters are obtained by analyzing the experimental results for the thermally activated magnetization switching probability as functions of both a bias current and an applied magnetic field. The analysis is greatly facilitated by the use of an analytical equation for the applied magnetic field dependence of the energy barrier. A figure of merit given by the ratio of the two parameters differs substantially depending on the direction of the magnetization switching. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794340]
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.