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Numerical Study of Enhanced Performance in InGaN Light-Emitting Diodes with Graded-composition AlGaInN Barriers
- Authors
- Kim, Su Jin; Kim, Tae Geun
- Issue Date
- Feb-2013
- Publisher
- OPTICAL SOC KOREA
- Keywords
- Light-emitting diodes (LEDs); AlGaInN; Quantum barriers; Numerical simulation
- Citation
- JOURNAL OF THE OPTICAL SOCIETY OF KOREA, v.17, no.1, pp.16 - 21
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE OPTICAL SOCIETY OF KOREA
- Volume
- 17
- Number
- 1
- Start Page
- 16
- End Page
- 21
- ISSN
- 1226-4776
- Abstract
- In this paper, we report the effect of GaN/graded-composition AlGaInN/GaN quantum barrier's in active regions on the electrical and optical properties of GaN-based vertical light emitting diodes (VLEDs). By modifying the aluminum composition profile within the AlGaInN quantum barrier, we have achieved improvements in the output power and the internal quantum efficiency (IQE) as compared to VLEDs using conventional GaN barriers. The forward voltages at 350 mA were calculated to be 3.5 and 4.0 V for VLEDs with GaN/graded-composition AlGaInN/GaN barriers and GaN barriers, respectively. The light-output power and IQE of VLEDs with GaN/graded-composition AlGaInN/GaN barriers were also increased by 4.3% and 9.51%, respectively, as compared to those with GaN barriers.
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Related Researcher
- Kim, Tae geun
- College of Engineering (School of Electrical Engineering)