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Numerical Study of Enhanced Performance in InGaN Light-Emitting Diodes with Graded-composition AlGaInN Barriers

Authors
Kim, Su JinKim, Tae Geun
Issue Date
2월-2013
Publisher
OPTICAL SOC KOREA
Keywords
Light-emitting diodes (LEDs); AlGaInN; Quantum barriers; Numerical simulation
Citation
JOURNAL OF THE OPTICAL SOCIETY OF KOREA, v.17, no.1, pp.16 - 21
Indexed
SCIE
SCOPUS
KCI
Journal Title
JOURNAL OF THE OPTICAL SOCIETY OF KOREA
Volume
17
Number
1
Start Page
16
End Page
21
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/104056
DOI
10.3807/JOSK.2013.17.1.016
ISSN
1226-4776
Abstract
In this paper, we report the effect of GaN/graded-composition AlGaInN/GaN quantum barrier's in active regions on the electrical and optical properties of GaN-based vertical light emitting diodes (VLEDs). By modifying the aluminum composition profile within the AlGaInN quantum barrier, we have achieved improvements in the output power and the internal quantum efficiency (IQE) as compared to VLEDs using conventional GaN barriers. The forward voltages at 350 mA were calculated to be 3.5 and 4.0 V for VLEDs with GaN/graded-composition AlGaInN/GaN barriers and GaN barriers, respectively. The light-output power and IQE of VLEDs with GaN/graded-composition AlGaInN/GaN barriers were also increased by 4.3% and 9.51%, respectively, as compared to those with GaN barriers.
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Kim, Tae geun
공과대학 (전기전자공학부)
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