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Inversion domain boundaries on tin (Sn)-doped ZnO nanobelts: Aberration-corrected scanning transmission electron microscopy study
- Authors
- Park, Yun Chang; Kim, Young Heon; Nahm, Ho-Hyun; Noh, Ji-Young; Kim, Yong-Sung; Kim, Joondong; Lee, Won Seok; Yang, Jun-Mo; Park, Jeonghee
- Issue Date
- 21-1월-2013
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.102, no.3
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 102
- Number
- 3
- ISSN
- 0003-6951
- Abstract
- An inversion domain boundary (IDB) related to an interstitial stacking layer (ISL) was observed on the {0002} planes of the wurtzite (WZ) structure of tin (Sn)-doped ZnO nanobelts. Quantitative STEM analysis confirmed that the ISL was composed of Sn element. Oxygen related to the ISL was in a triangular coordination as determined by analyzing the electron energy-loss spectra. Expansion of the interplanar spacing along the c-axis of a WZ structure was observed near the IDB while that along the a-axis was constrained. Density functional theory calculations were carried out to elucidate the origin of microstructural evolution. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4788812]
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