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Inversion domain boundaries on tin (Sn)-doped ZnO nanobelts: Aberration-corrected scanning transmission electron microscopy study

Authors
Park, Yun ChangKim, Young HeonNahm, Ho-HyunNoh, Ji-YoungKim, Yong-SungKim, JoondongLee, Won SeokYang, Jun-MoPark, Jeonghee
Issue Date
21-1월-2013
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.102, no.3
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
102
Number
3
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/104179
DOI
10.1063/1.4788812
ISSN
0003-6951
Abstract
An inversion domain boundary (IDB) related to an interstitial stacking layer (ISL) was observed on the {0002} planes of the wurtzite (WZ) structure of tin (Sn)-doped ZnO nanobelts. Quantitative STEM analysis confirmed that the ISL was composed of Sn element. Oxygen related to the ISL was in a triangular coordination as determined by analyzing the electron energy-loss spectra. Expansion of the interplanar spacing along the c-axis of a WZ structure was observed near the IDB while that along the a-axis was constrained. Density functional theory calculations were carried out to elucidate the origin of microstructural evolution. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4788812]
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