Growth and characterization of high-density mats of single-walled carbon nanotubes for interconnects
- Authors
- Siegmar Roth; U. Dettlaf-Weglikows
- Issue Date
- 10월-2008
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.93, no.16, pp.163111 - 163111
- Indexed
- SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 93
- Number
- 16
- Start Page
- 163111
- End Page
- 163111
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/104614
- ISSN
- 0003-6951
- Abstract
- We grow high-density, aligned single wall carbon nanotube mats for use as interconnects in integrated circuits by remote plasma chemical vapor deposition from a Fe-Al2O3 thin film catalyst. We carry out extensive Raman characterization of the resulting mats, and find that this catalyst system gives rise to a broad range of nanotube diameters, with no preferential selectivity of semiconducting tubes, but with at least 1/3 of metallic tubes. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3000061].
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